HXY MOSFET SISA16DN-T1-GE3-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	SISA16DN-T1-GE3-HXY
LCSC Part #	C53263179
Packaging	DFN-8L(3x3)
Customer #
Key Attributes	37.5W 30V 35A 2.5V 7.5mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET SISA16DN-T1-GE3-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(3x3)
Output Capacitance(Coss)	131pF
Pd - Power Dissipation	37.5W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	35A
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	2.5V
RDS(on)	7.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	109pF
Number	1 N-channel
Input Capacitance(Ciss)	940pF
Gate Charge(Qg)	9.8nC@4.5V
Vgs	±20V
Type	N-Channel

In-Stock: 98

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Qty	Unit Price	Total Amount
1+	$ 0.3935$ 0.3148	$ 0.31
10+	$ 0.311$ 0.2488	$ 2.49
30+	$ 0.2761$ 0.2209	$ 6.63
100+	$ 0.2333$ 0.1867	$ 18.67
500+	$ 0.2142$ 0.1714	$ 85.70
1,000+	$ 0.2015$ 0.1612	$ 161.20
Standard Packaging5000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(3x3)
Output Capacitance(Coss)	131pF
Pd - Power Dissipation	37.5W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	35A
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	2.5V
RDS(on)	7.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	109pF
Number	1 N-channel
Input Capacitance(Ciss)	940pF
Gate Charge(Qg)	9.8nC@4.5V
Vgs	±20V
Type	N-Channel