HXY MOSFET AON7514

Manufacturer	HXY MOSFETAsian Brands
MPN	AON7514
LCSC Part #	C53263171
Packaging	DFN-8L(3x3)
Customer #
Key Attributes	62.5W 30V 60A 2.5V 4mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET AON7514

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(3x3)
Output Capacitance(Coss)	400pF
Pd - Power Dissipation	62.5W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	60A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Reverse Transfer Capacitance (Crss@Vds)	315pF
RDS(on)	4mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	3.075nF
Gate Charge(Qg)	31.6nC@4.5V
Vgs	±20V
Type	N-Channel

In-Stock: 71

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Qty	Unit Price	Total Amount
1+	$ 0.6109$ 0.4888	$ 0.49
10+	$ 0.4951$ 0.3961	$ 3.96
30+	$ 0.4379$ 0.3504	$ 10.51
100+	$ 0.3808$ 0.3047	$ 30.47
500+	$ 0.3475$ 0.2780	$ 139.00
1,000+	$ 0.3285$ 0.2628	$ 262.80
Standard Packaging5000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(3x3)
Output Capacitance(Coss)	400pF
Pd - Power Dissipation	62.5W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	60A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Reverse Transfer Capacitance (Crss@Vds)	315pF
RDS(on)	4mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	3.075nF
Gate Charge(Qg)	31.6nC@4.5V
Vgs	±20V
Type	N-Channel