HXY MOSFET SIRA18BDP-T1-UE3-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	SIRA18BDP-T1-UE3-HXY
LCSC Part #	C53263168
Packaging	DFN-8L(5x6)
Customer #
Key Attributes	59W 30V 60A 2.5V 5.7mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET SIRA18BDP-T1-UE3-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	267pF
Pd - Power Dissipation	59W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	60A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
RDS(on)	5.7mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	210pF
Number	1 N-channel
Input Capacitance(Ciss)	2.295nF
Gate Charge(Qg)	20nC
Vgs	±20V
Type	N-Channel

In-Stock: 95

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Qty	Unit Price	Total Amount
5+	$ 0.2501$ 0.2126	$ 1.06
50+	$ 0.1981$ 0.1684	$ 8.42
150+	$ 0.1758$ 0.1495	$ 22.43
500+	$ 0.148$ 0.1258	$ 62.90
2,500+	$ 0.1357$ 0.1154	$ 288.50
5,000+	$ 0.1282$ 0.1090	$ 545.00
Standard Packaging5000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	267pF
Pd - Power Dissipation	59W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	60A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
RDS(on)	5.7mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	210pF
Number	1 N-channel
Input Capacitance(Ciss)	2.295nF
Gate Charge(Qg)	20nC
Vgs	±20V
Type	N-Channel