HXY MOSFET SIRA18DDP-T1-GE3-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	SIRA18DDP-T1-GE3-HXY
LCSC Part #	C53263167
Packaging	DFN-8L(5x6)
Customer #
Key Attributes	59W 30V 60A 2.5V 5.7mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET SIRA18DDP-T1-GE3-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	267pF
Pd - Power Dissipation	59W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	60A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
RDS(on)	5.7mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	210pF
Number	1 N-channel
Input Capacitance(Ciss)	2.295nF
Gate Charge(Qg)	20nC
Vgs	±20V
Type	N-Channel

In-Stock: 95

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Qty	Unit Price	Total Amount
5+	$ 0.3155$ 0.2524	$ 1.26
50+	$ 0.2499$ 0.2000	$ 10.00
150+	$ 0.2218$ 0.1775	$ 26.63
500+	$ 0.1867$ 0.1494	$ 74.70
2,500+	$ 0.1711$ 0.1369	$ 342.25
5,000+	$ 0.1618$ 0.1295	$ 647.50
Standard Packaging5000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	267pF
Pd - Power Dissipation	59W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	60A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
RDS(on)	5.7mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	210pF
Number	1 N-channel
Input Capacitance(Ciss)	2.295nF
Gate Charge(Qg)	20nC
Vgs	±20V
Type	N-Channel