HXY MOSFET DMN3032LQ-7-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	DMN3032LQ-7-HXY
LCSC Part #	C53263160
Packaging	SOT-23
Customer #
Key Attributes	1W 30V 5.8A 1.5V 22mΩ@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET DMN3032LQ-7-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	SOT-23
Output Capacitance(Coss)	60pF
Pd - Power Dissipation	1W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	5.8A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.5V
RDS(on)	22mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	53pF
Number	1 N-channel
Input Capacitance(Ciss)	420pF
Gate Charge(Qg)	5nC
Vgs	±20V
Type	N-Channel

In-Stock: 190

190 In stock, ships now

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Qty	Unit Price	Total Amount
5+	$ 0.1348$ 0.1079	$ 0.54
50+	$ 0.1074$ 0.0860	$ 4.30
150+	$ 0.0937$ 0.0750	$ 11.25
500+	$ 0.0834$ 0.0668	$ 33.40
3,000+	$ 0.0752$ 0.0602	$ 180.60
6,000+	$ 0.071$ 0.0568	$ 340.80
Standard Packaging3000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	SOT-23
Output Capacitance(Coss)	60pF
Pd - Power Dissipation	1W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	5.8A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.5V
RDS(on)	22mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	53pF
Number	1 N-channel
Input Capacitance(Ciss)	420pF
Gate Charge(Qg)	5nC
Vgs	±20V
Type	N-Channel