HXY MOSFET NVD4C05NT4G-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	NVD4C05NT4G-HXY
LCSC Part #	C53263133
Packaging	TO-252-2L
Customer #
Key Attributes	62.5W 30V 120A 1.7V 3mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET NVD4C05NT4G-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Output Capacitance(Coss)	850pF
Pd - Power Dissipation	62.5W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	120A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.7V
RDS(on)	3mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	85pF
Number	1 N-channel
Input Capacitance(Ciss)	2.485nF
Gate Charge(Qg)	20.6nC@10V
Vgs	±20V
Type	N-Channel

In-Stock: 99

99 In stock, ships now

Add to BOM List

Qty	Unit Price	Total Amount
1+	$ 1.3661$ 1.0929	$ 1.09
10+	$ 1.1376$ 0.9101	$ 9.10
30+	$ 1.0123$ 0.8099	$ 24.30
100+	$ 0.8711$ 0.6969	$ 69.69
500+	$ 0.8076$ 0.6461	$ 323.05
1,000+	$ 0.779$ 0.6232	$ 623.20
Standard Packaging2500/Full Reel

Better price for more quantity?

$

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Output Capacitance(Coss)	850pF
Pd - Power Dissipation	62.5W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	120A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.7V
RDS(on)	3mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	85pF
Number	1 N-channel
Input Capacitance(Ciss)	2.485nF
Gate Charge(Qg)	20.6nC@10V
Vgs	±20V
Type	N-Channel