HXY MOSFET NTMS4916NR2G-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	NTMS4916NR2G-HXY
LCSC Part #	C53263114
Packaging	SOP-8
Customer #
Key Attributes	1.5W 30V 18A 1.5V 5.5mΩ@10V 1 N-channel N-Channel SOP-8 Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET NTMS4916NR2G-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	SOP-8
Output Capacitance(Coss)	163pF
Pd - Power Dissipation	1.5W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	18A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.5V
Reverse Transfer Capacitance (Crss@Vds)	131pF
RDS(on)	5.5mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	1.317nF
Gate Charge(Qg)	12.6nC
Vgs	±20V
Type	N-Channel

In-Stock: 99

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Qty	Unit Price	Total Amount
1+	$ 0.4014$ 0.3212	$ 0.32
10+	$ 0.3174$ 0.2540	$ 2.54
30+	$ 0.2825$ 0.2260	$ 6.78
100+	$ 0.238$ 0.1904	$ 19.04
500+	$ 0.2174$ 0.1740	$ 87.00
1,000+	$ 0.2063$ 0.1651	$ 165.10
Standard Packaging3000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	SOP-8
Output Capacitance(Coss)	163pF
Pd - Power Dissipation	1.5W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	18A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.5V
Reverse Transfer Capacitance (Crss@Vds)	131pF
RDS(on)	5.5mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	1.317nF
Gate Charge(Qg)	12.6nC
Vgs	±20V
Type	N-Channel