HXY MOSFET IPD04N03LBG-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	IPD04N03LBG-HXY
LCSC Part #	C53263104
Packaging	TO-252-2L
Customer #
Key Attributes	53W 30V 100A 1.5V 3.8mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET IPD04N03LBG-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Output Capacitance(Coss)	267pF
Pd - Power Dissipation	53W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	100A
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	1.5V
Reverse Transfer Capacitance (Crss@Vds)	210pF
RDS(on)	3.8mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	2.295nF
Gate Charge(Qg)	20nC
Vgs	±20V
Type	N-Channel

In-Stock: 49

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Qty	Unit Price	Total Amount
1+	$ 1.4486$ 1.1589	$ 1.16
10+	$ 1.2058$ 0.9647	$ 9.65
30+	$ 1.0726$ 0.8581	$ 25.74
100+	$ 0.9234$ 0.7388	$ 73.88
500+	$ 0.8552$ 0.6842	$ 342.10
1,000+	$ 0.8266$ 0.6613	$ 661.30
Standard Packaging2500/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Output Capacitance(Coss)	267pF
Pd - Power Dissipation	53W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	100A
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	1.5V
Reverse Transfer Capacitance (Crss@Vds)	210pF
RDS(on)	3.8mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	2.295nF
Gate Charge(Qg)	20nC
Vgs	±20V
Type	N-Channel