HXY MOSFET NTD4806NT4G-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	NTD4806NT4G-HXY
LCSC Part #	C53263071
Packaging	TO-252-2L
Customer #
Key Attributes	54W 30V 80A 1.6V 5mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET NTD4806NT4G-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Output Capacitance(Coss)	200pF
Pd - Power Dissipation	54W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	80A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
RDS(on)	5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	180pF
Number	1 N-channel
Input Capacitance(Ciss)	1.16nF
Gate Charge(Qg)	11.1nC@4.5V
Vgs	±20V
Type	N-Channel

In-Stock: 95

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Qty	Unit Price	Total Amount
5+	$ 0.3856$ 0.3085	$ 1.54
50+	$ 0.3063$ 0.2451	$ 12.26
150+	$ 0.2713$ 0.2171	$ 32.57
500+	$ 0.2285$ 0.1828	$ 91.40
2,500+	$ 0.2095$ 0.1676	$ 419.00
5,000+	$ 0.1984$ 0.1588	$ 794.00
Standard Packaging2500/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Output Capacitance(Coss)	200pF
Pd - Power Dissipation	54W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	80A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
RDS(on)	5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	180pF
Number	1 N-channel
Input Capacitance(Ciss)	1.16nF
Gate Charge(Qg)	11.1nC@4.5V
Vgs	±20V
Type	N-Channel