HXY MOSFET IPD040N03LF2SATMA1-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	IPD040N03LF2SATMA1-HXY
LCSC Part #	C53263053
Packaging	TO-252-2L
Customer #
Key Attributes	62.5W 30V 120A 1.7V 3mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET IPD040N03LF2SATMA1-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Output Capacitance(Coss)	850pF
Pd - Power Dissipation	62.5W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	120A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.7V
RDS(on)	3mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	85pF
Number	1 N-channel
Input Capacitance(Ciss)	2.485nF
Gate Charge(Qg)	20.6nC@10V
Vgs	±20V
Type	N-Channel

In-Stock: 90

90 In stock, ships now

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Qty	Unit Price	Total Amount
1+	$ 0.5583$ 0.5025	$ 0.50
10+	$ 0.4509$ 0.4059	$ 4.06
30+	$ 0.3988$ 0.3590	$ 10.77
100+	$ 0.3451$ 0.3106	$ 31.06
500+	$ 0.3125$ 0.2813	$ 140.65
1,000+	$ 0.2963$ 0.2667	$ 266.70
Standard Packaging2500/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Output Capacitance(Coss)	850pF
Pd - Power Dissipation	62.5W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	120A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.7V
RDS(on)	3mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	85pF
Number	1 N-channel
Input Capacitance(Ciss)	2.485nF
Gate Charge(Qg)	20.6nC@10V
Vgs	±20V
Type	N-Channel