HXY MOSFET DMN3009SFGQ-7-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	DMN3009SFGQ-7-HXY
LCSC Part #	C53263013
Packaging	DFN-8L(3x3)
Customer #
Key Attributes	62.5W 30V 60A 2.5V 4mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET DMN3009SFGQ-7-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(3x3)
Output Capacitance(Coss)	400pF
Pd - Power Dissipation	62.5W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	60A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Reverse Transfer Capacitance (Crss@Vds)	315pF
RDS(on)	4mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	3.075nF
Gate Charge(Qg)	31.6nC@4.5V
Vgs	±20V
Type	N-Channel

In-Stock: 99

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Qty	Unit Price	Total Amount
1+	$ 0.6648$ 0.5319	$ 0.53
10+	$ 0.5395$ 0.4316	$ 4.32
30+	$ 0.4776$ 0.3821	$ 11.46
100+	$ 0.4141$ 0.3313	$ 33.13
500+	$ 0.3776$ 0.3021	$ 151.05
1,000+	$ 0.3586$ 0.2869	$ 286.90
Standard Packaging5000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(3x3)
Output Capacitance(Coss)	400pF
Pd - Power Dissipation	62.5W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	60A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Reverse Transfer Capacitance (Crss@Vds)	315pF
RDS(on)	4mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	3.075nF
Gate Charge(Qg)	31.6nC@4.5V
Vgs	±20V
Type	N-Channel