HXY MOSFET SIRA18DP-T1-GE3-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	SIRA18DP-T1-GE3-HXY
LCSC Part #	C53263003
Packaging	DFN-8L(5x6)
Customer #
Key Attributes	37W 30V 80A 1.7V 4.7mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET SIRA18DP-T1-GE3-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	310pF
Pd - Power Dissipation	37W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	80A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.7V
Reverse Transfer Capacitance (Crss@Vds)	260pF
RDS(on)	4.7mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	1.93nF
Gate Charge(Qg)	38nC@10V
Vgs	±20V
Type	N-Channel

In-Stock: 40

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Qty	Unit Price	Total Amount
5+	$ 0.2616$ 0.2224	$ 1.11
50+	$ 0.2073$ 0.1763	$ 8.82
150+	$ 0.1839$ 0.1564	$ 23.46
500+	$ 0.1549$ 0.1317	$ 65.85
2,500+	$ 0.1419$ 0.1207	$ 301.75
5,000+	$ 0.1342$ 0.1141	$ 570.50
Standard Packaging5000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	310pF
Pd - Power Dissipation	37W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	80A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.7V
Reverse Transfer Capacitance (Crss@Vds)	260pF
RDS(on)	4.7mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	1.93nF
Gate Charge(Qg)	38nC@10V
Vgs	±20V
Type	N-Channel