HXY MOSFET RQ3E150BNTB-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	RQ3E150BNTB-HXY
LCSC Part #	C53262999
Packaging	DFN-8L(3x3)
Customer #
Key Attributes	46W 30V 90A 1.6V 3.5mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET RQ3E150BNTB-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(3x3)
Output Capacitance(Coss)	277pF
Pd - Power Dissipation	46W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	90A
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	1.6V
RDS(on)	3.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	209pF
Number	1 N-channel
Input Capacitance(Ciss)	2.088nF
Gate Charge(Qg)	20nC@4.5V
Vgs	±20V
Type	N-Channel

In-Stock: 49

49 In stock, ships now

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Qty	Unit Price	Total Amount
1+	$ 0.4617$ 0.3694	$ 0.37
10+	$ 0.3665$ 0.2932	$ 2.93
30+	$ 0.3253$ 0.2603	$ 7.81
100+	$ 0.2745$ 0.2196	$ 21.96
500+	$ 0.2507$ 0.2006	$ 100.30
1,000+	$ 0.238$ 0.1904	$ 190.40
Standard Packaging5000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(3x3)
Output Capacitance(Coss)	277pF
Pd - Power Dissipation	46W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	90A
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	1.6V
RDS(on)	3.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	209pF
Number	1 N-channel
Input Capacitance(Ciss)	2.088nF
Gate Charge(Qg)	20nC@4.5V
Vgs	±20V
Type	N-Channel