HXY MOSFET RQ3E130BNTB-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	RQ3E130BNTB-HXY
LCSC Part #	C53262995
Packaging	DFN-8L(3x3)
Customer #
Key Attributes	62.5W 30V 55A 1.5V 4.7mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET RQ3E130BNTB-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(3x3)
Output Capacitance(Coss)	400pF
Pd - Power Dissipation	62.5W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	55A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.5V
RDS(on)	4.7mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	315pF
Number	1 N-channel
Input Capacitance(Ciss)	3.075nF
Gate Charge(Qg)	31.6nC@4.5V
Vgs	±20V
Type	N-Channel

In-Stock: 85

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Qty	Unit Price	Total Amount
5+	$ 0.3078$ 0.2463	$ 1.23
50+	$ 0.2438$ 0.1951	$ 9.76
150+	$ 0.2164$ 0.1732	$ 25.98
500+	$ 0.1822$ 0.1458	$ 72.90
2,500+	$ 0.167$ 0.1336	$ 334.00
5,000+	$ 0.1578$ 0.1263	$ 631.50
Standard Packaging5000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(3x3)
Output Capacitance(Coss)	400pF
Pd - Power Dissipation	62.5W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	55A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.5V
RDS(on)	4.7mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	315pF
Number	1 N-channel
Input Capacitance(Ciss)	3.075nF
Gate Charge(Qg)	31.6nC@4.5V
Vgs	±20V
Type	N-Channel