HXY MOSFET SQS482EN-T1_GE3-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	SQS482EN-T1_GE3-HXY
LCSC Part #	C53262987
Packaging	DFN-8L(3x3)
Customer #
Key Attributes	37.5W 30V 35A 2.5V 7.5mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET SQS482EN-T1_GE3-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(3x3)
Output Capacitance(Coss)	131pF
Pd - Power Dissipation	37.5W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	35A
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	2.5V
RDS(on)	7.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	109pF
Number	1 N-channel
Input Capacitance(Ciss)	940pF
Gate Charge(Qg)	9.8nC@4.5V
Vgs	±20V
Type	N-Channel

In-Stock: 99

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Qty	Unit Price	Total Amount
1+	$ 0.3888$ 0.3111	$ 0.31
10+	$ 0.3078$ 0.2463	$ 2.46
30+	$ 0.2745$ 0.2196	$ 6.59
100+	$ 0.2301$ 0.1841	$ 18.41
500+	$ 0.2111$ 0.1689	$ 84.45
1,000+	$ 0.2$ 0.1600	$ 160.00
Standard Packaging5000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(3x3)
Output Capacitance(Coss)	131pF
Pd - Power Dissipation	37.5W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	35A
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	2.5V
RDS(on)	7.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	109pF
Number	1 N-channel
Input Capacitance(Ciss)	940pF
Gate Charge(Qg)	9.8nC@4.5V
Vgs	±20V
Type	N-Channel