HXY MOSFET SIS406DN-T1-GE3-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	SIS406DN-T1-GE3-HXY
LCSC Part #	C53262984
Packaging	DFN-8L(3x3)
Customer #
Key Attributes	20W 30V 30A 2.5V 8mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET SIS406DN-T1-GE3-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(3x3)
Output Capacitance(Coss)	81pF
Pd - Power Dissipation	20W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	30A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Reverse Transfer Capacitance (Crss@Vds)	65pF
RDS(on)	8mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	572pF
Gate Charge(Qg)	7.2nC@4.5V
Vgs	±20V
Type	N-Channel

In-Stock: 284

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Qty	Unit Price	Total Amount
1+	$ 0.2835$ 0.2268	$ 0.23
10+	$ 0.2771$ 0.2217	$ 2.22
30+	$ 0.2739$ 0.2192	$ 6.58
100+	$ 0.2691$ 0.2153	$ 21.53
Standard Packaging5000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(3x3)
Output Capacitance(Coss)	81pF
Pd - Power Dissipation	20W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	30A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Reverse Transfer Capacitance (Crss@Vds)	65pF
RDS(on)	8mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	572pF
Gate Charge(Qg)	7.2nC@4.5V
Vgs	±20V
Type	N-Channel