HXY MOSFET AOD5N50M

Manufacturer	HXY MOSFETAsian Brands
MPN	AOD5N50M
LCSC Part #	C53262969
Packaging	TO-252-2L
Customer #
Key Attributes	83W 500V 5A 3.4V 1.3Ω@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET AOD5N50M

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Output Capacitance(Coss)	42pF
Pd - Power Dissipation	83W
Configuration	Standalone
Drain to Source Voltage	500V
Current - Continuous Drain(Id)	5A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	3.4V
RDS(on)	1.3Ω@10V
Reverse Transfer Capacitance (Crss@Vds)	4pF
Number	1 N-channel
Input Capacitance(Ciss)	582pF
Gate Charge(Qg)	14nC@10V
Vgs	±30V
Type	N-Channel

In-Stock: 80

80 In stock, ships now

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Qty	Unit Price	Total Amount
1+	$ 1.1963$ 0.9571	$ 0.96
10+	$ 0.9964$ 0.7972	$ 7.97
30+	$ 0.8853$ 0.7083	$ 21.25
100+	$ 0.7616$ 0.6093	$ 60.93
500+	$ 0.7061$ 0.5649	$ 282.45
1,000+	$ 0.6823$ 0.5459	$ 545.90
Standard Packaging2500/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Output Capacitance(Coss)	42pF
Pd - Power Dissipation	83W
Configuration	Standalone
Drain to Source Voltage	500V
Current - Continuous Drain(Id)	5A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	3.4V
RDS(on)	1.3Ω@10V
Reverse Transfer Capacitance (Crss@Vds)	4pF
Number	1 N-channel
Input Capacitance(Ciss)	582pF
Gate Charge(Qg)	14nC@10V
Vgs	±30V
Type	N-Channel