HXY MOSFET IPD50R1K4CEBTMA1-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	IPD50R1K4CEBTMA1-HXY
LCSC Part #	C53262968
Packaging	TO-252-2L
Customer #
Key Attributes	83W 500V 5A 3.4V 1.3Ω@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET IPD50R1K4CEBTMA1-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Output Capacitance(Coss)	42pF
Pd - Power Dissipation	83W
Configuration	Standalone
Drain to Source Voltage	500V
Current - Continuous Drain(Id)	5A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	3.4V
RDS(on)	1.3Ω@10V
Reverse Transfer Capacitance (Crss@Vds)	4pF
Number	1 N-channel
Input Capacitance(Ciss)	582pF
Gate Charge(Qg)	14nC@10V
Vgs	±30V
Type	N-Channel

In-Stock: 99

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Qty	Unit Price	Total Amount
1+	$ 0.4697$ 0.3758	$ 0.38
10+	$ 0.3729$ 0.2984	$ 2.98
30+	$ 0.3301$ 0.2641	$ 7.92
100+	$ 0.2793$ 0.2235	$ 22.35
500+	$ 0.2555$ 0.2044	$ 102.20
1,000+	$ 0.2412$ 0.1930	$ 193.00
Standard Packaging2500/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Output Capacitance(Coss)	42pF
Pd - Power Dissipation	83W
Configuration	Standalone
Drain to Source Voltage	500V
Current - Continuous Drain(Id)	5A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	3.4V
RDS(on)	1.3Ω@10V
Reverse Transfer Capacitance (Crss@Vds)	4pF
Number	1 N-channel
Input Capacitance(Ciss)	582pF
Gate Charge(Qg)	14nC@10V
Vgs	±30V
Type	N-Channel