HXY MOSFET DIT085N10-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	DIT085N10-HXY
LCSC Part #	C53262938
Packaging	TO-220C
Customer #
Key Attributes	178W 100V 120A 3V 4.1mΩ@10V 1 N-channel N-Channel TO-220C Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET DIT085N10-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-220C
Output Capacitance(Coss)	592pF
Pd - Power Dissipation	178W
Configuration	Standalone
Drain to Source Voltage	100V
Current - Continuous Drain(Id)	120A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	3V
RDS(on)	4.1mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	19.8pF
Number	1 N-channel
Input Capacitance(Ciss)	4.102nF
Gate Charge(Qg)	69nC@10V
Vgs	±20V
Type	N-Channel

In-Stock: 47

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Qty	Unit Price	Total Amount
1+	$ 2.3202$ 1.8562	$ 1.86
10+	$ 1.9759$ 1.5808	$ 15.81
50+	$ 1.7611$ 1.4089	$ 70.45
100+	$ 1.54$ 1.2320	$ 123.20
500+	$ 1.4405$ 1.1524	$ 576.20
1,000+	$ 1.3963$ 1.1171	$ 1117.10
Standard Packaging50/Full Tube

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-220C
Output Capacitance(Coss)	592pF
Pd - Power Dissipation	178W
Configuration	Standalone
Drain to Source Voltage	100V
Current - Continuous Drain(Id)	120A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	3V
RDS(on)	4.1mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	19.8pF
Number	1 N-channel
Input Capacitance(Ciss)	4.102nF
Gate Charge(Qg)	69nC@10V
Vgs	±20V
Type	N-Channel