HXY MOSFET FDP4D5N10C-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	FDP4D5N10C-HXY
LCSC Part #	C53262908
Packaging	TO-220C
Customer #
Key Attributes	178W 100V 120A 3V 4.1mΩ@10V 1 N-channel N-Channel TO-220C Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET FDP4D5N10C-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-220C
Output Capacitance(Coss)	592pF
Pd - Power Dissipation	178W
Configuration	Standalone
Drain to Source Voltage	100V
Current - Continuous Drain(Id)	120A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	3V
RDS(on)	4.1mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	19.8pF
Number	1 N-channel
Input Capacitance(Ciss)	4.102nF
Gate Charge(Qg)	69nC@10V
Vgs	±20V
Type	N-Channel

In-Stock: 50

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Qty	Unit Price	Total Amount
1+	$ 2.9676$ 2.3741	$ 2.37
10+	$ 2.5272$ 2.0218	$ 20.22
50+	$ 2.2525$ 1.8020	$ 90.10
100+	$ 1.9697$ 1.5758	$ 157.58
500+	$ 1.8413$ 1.4731	$ 736.55
1,000+	$ 1.7861$ 1.4289	$ 1428.90
Standard Packaging50/Full Tube

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-220C
Output Capacitance(Coss)	592pF
Pd - Power Dissipation	178W
Configuration	Standalone
Drain to Source Voltage	100V
Current - Continuous Drain(Id)	120A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	3V
RDS(on)	4.1mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	19.8pF
Number	1 N-channel
Input Capacitance(Ciss)	4.102nF
Gate Charge(Qg)	69nC@10V
Vgs	±20V
Type	N-Channel