HXY MOSFET SIR4604DP-T1-GE3-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	SIR4604DP-T1-GE3-HXY
LCSC Part #	C53262855
Packaging	DFN-8L(5x6)
Customer #
Key Attributes	89W 60V 65A 1.6V 8mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET SIR4604DP-T1-GE3-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	370pF
Pd - Power Dissipation	89W
Drain to Source Voltage	60V
Configuration	Standalone
Current - Continuous Drain(Id)	65A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
Reverse Transfer Capacitance (Crss@Vds)	20pF
RDS(on)	8mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	930pF
Gate Charge(Qg)	19nC@10V
Vgs	±20V
Type	N-Channel

In-Stock: 20

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Qty	Unit Price	Total Amount
1+	$ 1.0868$ 0.9238	$ 0.92
10+	$ 0.8822$ 0.7499	$ 7.50
30+	$ 0.779$ 0.6622	$ 19.87
100+	$ 0.6775$ 0.5759	$ 57.59
500+	$ 0.6172$ 0.5247	$ 262.35
1,000+	$ 0.5855$ 0.4977	$ 497.70
Standard Packaging5000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	370pF
Pd - Power Dissipation	89W
Drain to Source Voltage	60V
Configuration	Standalone
Current - Continuous Drain(Id)	65A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
Reverse Transfer Capacitance (Crss@Vds)	20pF
RDS(on)	8mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	930pF
Gate Charge(Qg)	19nC@10V
Vgs	±20V
Type	N-Channel