HXY MOSFET SIR182DP-T1-RE3-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	SIR182DP-T1-RE3-HXY
LCSC Part #	C53262849
Packaging	DFN-8L(5x6)
Customer #
Key Attributes	113W 60V 125A 1.6V 2.4mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET SIR182DP-T1-RE3-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	2.188nF
Pd - Power Dissipation	113W
Drain to Source Voltage	60V
Configuration	Standalone
Current - Continuous Drain(Id)	125A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
Reverse Transfer Capacitance (Crss@Vds)	66pF
RDS(on)	2.4mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	4.61nF
Gate Charge(Qg)	74.37nC@10V
Vgs	±20V
Type	N-Channel

In-Stock: 193

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Qty	Unit Price	Total Amount
1+	$ 0.708$ 0.6372	$ 0.64
10+	$ 0.5729$ 0.5157	$ 5.16
30+	$ 0.5062$ 0.4556	$ 13.67
100+	$ 0.4395$ 0.3956	$ 39.56
500+	$ 0.3988$ 0.3590	$ 179.50
1,000+	$ 0.3776$ 0.3399	$ 339.90
Standard Packaging5000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	2.188nF
Pd - Power Dissipation	113W
Drain to Source Voltage	60V
Configuration	Standalone
Current - Continuous Drain(Id)	125A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
Reverse Transfer Capacitance (Crss@Vds)	66pF
RDS(on)	2.4mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	4.61nF
Gate Charge(Qg)	74.37nC@10V
Vgs	±20V
Type	N-Channel