HXY MOSFET SIR186DP-T1-RE3-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	SIR186DP-T1-RE3-HXY
LCSC Part #	C53262845
Packaging	DFN-8L(5x6)
Customer #
Key Attributes	73.5W 60V 100A 2.9V 3.7mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET SIR186DP-T1-RE3-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	773pF
Pd - Power Dissipation	73.5W
Drain to Source Voltage	60V
Configuration	Standalone
Current - Continuous Drain(Id)	100A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.9V
Reverse Transfer Capacitance (Crss@Vds)	46.8pF
RDS(on)	3.7mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	1.673nF
Gate Charge(Qg)	28.5nC@10V
Vgs	±20V
Type	N-Channel

In-Stock: 98

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Qty	Unit Price	Total Amount
1+	$ 0.7267$ 0.5814	$ 0.58
10+	$ 0.5902$ 0.4722	$ 4.72
30+	$ 0.522$ 0.4176	$ 12.53
100+	$ 0.4538$ 0.3631	$ 36.31
500+	$ 0.4126$ 0.3301	$ 165.05
1,000+	$ 0.3919$ 0.3136	$ 313.60
Standard Packaging5000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	773pF
Pd - Power Dissipation	73.5W
Drain to Source Voltage	60V
Configuration	Standalone
Current - Continuous Drain(Id)	100A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.9V
Reverse Transfer Capacitance (Crss@Vds)	46.8pF
RDS(on)	3.7mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	1.673nF
Gate Charge(Qg)	28.5nC@10V
Vgs	±20V
Type	N-Channel