HXY MOSFET SIR662DP-T1-GE3-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	SIR662DP-T1-GE3-HXY
LCSC Part #	C53262842
Packaging	DFN-8L(5x6)
Customer #
Key Attributes	113W 60V 125A 1.6V 2.4mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET SIR662DP-T1-GE3-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	2.188nF
Pd - Power Dissipation	113W
Drain to Source Voltage	60V
Configuration	Standalone
Current - Continuous Drain(Id)	125A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
Reverse Transfer Capacitance (Crss@Vds)	66pF
RDS(on)	2.4mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	4.61nF
Gate Charge(Qg)	74.37nC@10V
Vgs	±20V
Type	N-Channel

In-Stock: 77

77 In stock, ships now

Add to BOM List

Qty	Unit Price	Total Amount
1+	$ 1.2296$ 0.9837	$ 0.98
10+	$ 1.025$ 0.8200	$ 8.20
30+	$ 0.9107$ 0.7286	$ 21.86
100+	$ 0.7838$ 0.6271	$ 62.71
500+	$ 0.7267$ 0.5814	$ 290.70
1,000+	$ 0.7013$ 0.5611	$ 561.10
Standard Packaging5000/Full Reel

Better price for more quantity?

$

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	2.188nF
Pd - Power Dissipation	113W
Drain to Source Voltage	60V
Configuration	Standalone
Current - Continuous Drain(Id)	125A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
Reverse Transfer Capacitance (Crss@Vds)	66pF
RDS(on)	2.4mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	4.61nF
Gate Charge(Qg)	74.37nC@10V
Vgs	±20V
Type	N-Channel