HXY MOSFET SIR664DP-T1-GE3-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	SIR664DP-T1-GE3-HXY
LCSC Part #	C53262841
Packaging	DFN-8L(5x6)
Customer #
Key Attributes	108W 60V 80A 3V 6mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET SIR664DP-T1-GE3-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	286pF
Pd - Power Dissipation	108W
Drain to Source Voltage	60V
Configuration	Standalone
Current - Continuous Drain(Id)	80A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	3V
Reverse Transfer Capacitance (Crss@Vds)	257pF
RDS(on)	6mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	4.136nF
Gate Charge(Qg)	90nC@10V
Vgs	±20V
Type	N-Channel

In-Stock: 61

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Qty	Unit Price	Total Amount
1+	$ 0.9359$ 0.8424	$ 0.84
10+	$ 0.7569$ 0.6813	$ 6.81
30+	$ 0.6657$ 0.5992	$ 17.98
100+	$ 0.5778$ 0.5201	$ 52.01
500+	$ 0.5241$ 0.4717	$ 235.85
1,000+	$ 0.4964$ 0.4468	$ 446.80
Standard Packaging5000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	286pF
Pd - Power Dissipation	108W
Drain to Source Voltage	60V
Configuration	Standalone
Current - Continuous Drain(Id)	80A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	3V
Reverse Transfer Capacitance (Crss@Vds)	257pF
RDS(on)	6mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	4.136nF
Gate Charge(Qg)	90nC@10V
Vgs	±20V
Type	N-Channel