HXY MOSFET RB238T100HZC9-HXY
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | RB238T100HZC9-HXY |
| LCSC Part # | C53262812 |
| Packaging | TO-220F |
| Customer # | |
| Key Attributes | 100V 1 Pair Common Cathode 820mV@20A 40A TO-220F Single Diodes RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-220F | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Diode Configuration | 1 Pair Common Cathode | |
| Voltage - Forward(Vf@If) | 820mV@20A | |
| Reverse Leakage Current (Ir) | 100uA@100V | |
| Non-Repetitive Peak Forward Surge Current | 350A | |
| Current - Rectified | 40A |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Low power consumption, high efficiency
- High surge capability
- Suitable for low-voltage high-frequency inverters, freewheeling, and polarity protection applications
- Metal-silicon junction, majority carrier conduction
- High current capability, low forward voltage drop
- Guard ring for overvoltage protection
- TO-220F package
In-Stock: 49
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.9321$ 1.5457 | $ 1.55 |
| 10+ | $ 1.645$ 1.3160 | $ 13.16 |
| 50+ | $ 1.4658$ 1.1727 | $ 58.64 |
| 100+ | $ 1.2818$ 1.0255 | $ 102.55 |
| 500+ | $ 1.1993$ 0.9595 | $ 479.75 |
| 1,000+ | $ 1.1628$ 0.9303 | $ 930.30 |
Standard Packaging50/Full Tube | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-220F | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Diode Configuration | 1 Pair Common Cathode | |
| Voltage - Forward(Vf@If) | 820mV@20A | |
| Reverse Leakage Current (Ir) | 100uA@100V | |
| Non-Repetitive Peak Forward Surge Current | 350A | |
| Current - Rectified | 40A |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Low power consumption, high efficiency
- High surge capability
- Suitable for low-voltage high-frequency inverters, freewheeling, and polarity protection applications
- Metal-silicon junction, majority carrier conduction
- High current capability, low forward voltage drop
- Guard ring for overvoltage protection
- TO-220F package
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |



