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HUASHUO HSBA4072CRoHS

Manufacturer
HUASHUOAsian Brands
MPN
HSBA4072C
LCSC Part #
C53244009
Packaging
PRPAK-8(5x6)
Customer #
Key Attributes
40V 130A 1.8V 50W 1.5mΩ@10V 1 N-channel N-Channel PRPAK-8(5x6) Single FETs, MOSFETs RoHS
Datasheetpdf iconHUASHUO HSBA4072C
In-Stock: 200
200 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.4674$ 0.47
10+$ 0.3697$ 3.70
30+$ 0.3274$ 9.82
100+$ 0.2753$ 27.53
500+$ 0.2508$ 125.40
1,000+$ 0.2378$ 237.80
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHUASHUO
PackagingPRPAK-8(5x6)
Drain to Source Voltage40V
Output Capacitance(Coss)857pF
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)1.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.68nF
Gate Charge(Qg)48nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

HSBA4072C is a high cell density SGT N-channel MOSFET that delivers excellent on-resistance and gate charge performance for most synchronous buck converter applications. This product complies with RoHS and halogen-free environmental requirements, and has undergone comprehensive functional reliability validation to ensure 100% single-pulse avalanche energy capability.

Features

AI Translation
  • 100% single-pulse avalanche energy guaranteed
  • RoHS-compliant devices available
  • Ultra-low gate charge
  • Excellent CdV/dt immunity
  • Advanced high cell density SGT MOS technology