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HUASHUO HSW4614CRoHS

Manufacturer
HUASHUOAsian Brands
MPN
HSW4614C
LCSC Part #
C53243992
Packaging
SOT-23-6L
Customer #
Key Attributes
40V 3A 1.6V 1.4W 36mΩ@10V 1 N-Channel + 1 P-Channel N-Channel + P-Channel SOT-23-6L Single FETs, MOSFETs RoHS
Datasheetpdf iconHUASHUO HSW4614C
In-Stock: 100
100 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1012$ 0.51
50+$ 0.0801$ 4.01
150+$ 0.0696$ 10.44
500+$ 0.0617$ 30.85
3,000+$ 0.0554$ 166.20
6,000+$ 0.0522$ 313.20
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHUASHUO
PackagingSOT-23-6L
Drain to Source Voltage40V
Current - Continuous Drain(Id)3A
Output Capacitance(Coss)31pF;33pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)22pF
RDS(on)36mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)318pF;412pF
Gate Charge(Qg)6.4nC@10V;7.4nC@10V
TypeN-Channel + P-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

HSW4614C is a high-performance complementary N-channel and P-channel MOSFET with high cell density, delivering excellent on-resistance and gate charge performance for most synchronous buck converter applications. The product complies with RoHS and green product requirements, with 100% guaranteed avalanche energy, and has passed comprehensive functional reliability qualification.

Features

AI Translation
  • 100% guaranteed avalanche energy
  • Green device options available
  • Ultra-low gate charge
  • Excellent dV/dt immunity
  • Advanced high cell density trench technology