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HUASHUO HSS8N06 product image
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HUASHUO HSS8N06RoHS

Manufacturer
HUASHUOAsian Brands
MPN
HSS8N06
LCSC Part #
C53243985
Packaging
SOT-23L
Customer #
Key Attributes
60V 8A 1.6V 1.4W 28mΩ@10V 1 N-channel N-Channel SOT-23L Single FETs, MOSFETs RoHS
Datasheetpdf iconHUASHUO HSS8N06
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QtyUnit Price(Reference Only)Total Amount
10+$ 0.064$ 0.64
100+$ 0.0508$ 5.08
300+$ 0.0441$ 13.23
3,000+$ 0.0391$ 117.30
6,000+$ 0.0352$ 211.20
9,000+$ 0.0332$ 298.80
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHUASHUO
PackagingSOT-23L
Drain to Source Voltage60V
Current - Continuous Drain(Id)8A
Output Capacitance(Coss)65pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation1.4W
RDS(on)28mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)53pF
Number1 N-channel
Input Capacitance(Ciss)1.35nF
Gate Charge(Qg)15nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

HSS8N06 is a high cell density trench N-channel MOSFET that delivers excellent on-resistance and gate charge performance for most synchronous buck converter applications. The device is RoHS and green product compliant, 100% EAS guaranteed, and fully qualified through comprehensive functional reliability certification.

Features

AI Translation
  • 100% EAS guaranteed
  • Green device option available
  • Ultra-low gate charge
  • Excellent CdV/dt immunity
  • Advanced high cell density trench technology