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ElecSuper BSN20BKR(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
BSN20BKR(ES)
LCSC Part #
C53199123
Packaging
SOT-23
Customer #
Key Attributes
350mW 60V 300mA 1.6V 1.85Ω@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS
Datasheetpdf iconElecSuper BSN20BKR(ES)
In-Stock: 1,960
1,960 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
20+$ 0.034$ 0.68
200+$ 0.0267$ 5.34
600+$ 0.0226$ 13.56
3,000+$ 0.0202$ 60.60
9,000+$ 0.018$ 162.00
21,000+$ 0.0169$ 354.90
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-23
Output Capacitance(Coss)11pF
Pd - Power Dissipation350mW
Drain to Source Voltage60V
Configuration-
Current - Continuous Drain(Id)300mA
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.6V
RDS(on)1.85Ω@10V
Reverse Transfer Capacitance (Crss@Vds)4pF
Number1 N-channel
Input Capacitance(Ciss)28pF
Gate Charge(Qg)1.8nC
Vgs±20V
TypeN-Channel

Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

BSN20BKR(ES) is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product BSN20BKR(ES) is lead-free.

Features

AI Translation
  • 60V, typical R<sub>DS(ON)</sub> = 1.85Ω at V<sub>GS</sub> = 10V
  • Typical R<sub>DS(ON)</sub> = 2.05Ω at V<sub>GS</sub> = 4.5V
  • Trench MOSFET technology
  • High-density cell design for low on-resistance
  • ESD protection - HBM: 2kV
  • Halogen-free material
  • Reliable and robust
  • Avalanche-rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop computers
  • DC/DC conversion