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ElecSuper DMN65D8L-7(ES) product image
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ElecSuper DMN65D8L-7(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
DMN65D8L-7(ES)
LCSC Part #
C53199120
Packaging
SOT-23
Customer #
Key Attributes
350mW 60V 300mA 1.6V 1.85Ω@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS
Datasheetpdf iconElecSuper DMN65D8L-7(ES)
In-Stock: 2,900
2,900 In stock, ships now
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QtyUnit PriceTotal Amount
50+$ 0.0176$ 0.88
500+$ 0.0136$ 6.80
3,000+$ 0.0114$ 34.20
6,000+$ 0.0101$ 60.60
24,000+$ 0.009$ 216.00
51,000+$ 0.0084$ 428.40
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-23
Output Capacitance(Coss)11pF
Pd - Power Dissipation350mW
Drain to Source Voltage60V
Configuration-
Current - Continuous Drain(Id)300mA
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.6V
RDS(on)1.85Ω@10V
Reverse Transfer Capacitance (Crss@Vds)4pF
Number1 N-channel
Input Capacitance(Ciss)28pF
Gate Charge(Qg)1.8nC
Vgs±20V
TypeN-Channel

Additional Information

TypeDetails
Minimum50
Multiple50
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

DMN65D8L-7(ES) is an N-channel enhancement-mode MOSFET. It employs advanced trench technology and design to deliver excellent on-resistance at low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard DMN65D8L-7(ES) is a lead-free product.

Features

AI Translation
  • 60V, R<sub>DS(on)</sub> = 1.85Ω (typ.) at V<sub>GS</sub> = 10V
  • R<sub>DS(on)</sub> = 2.05Ω (typ.) at V<sub>GS</sub> = 4.5V
  • Trench MOSFET technology
  • High-density cell design for low on-resistance
  • ESD protection - Human Body Model: 2kV
  • Halogen-free material
  • Reliable and robust
  • Avalanche rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC-DC conversion