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ElecSuper IRFH7440TRPBF(ES) product image
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ElecSuper IRFH7440TRPBF(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
IRFH7440TRPBF(ES)
LCSC Part #
C53199117
Packaging
PDFN-8L(5x6)
Customer #
Key Attributes
40V 93.56A 1.5V 62.5W 2.2mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheetpdf iconElecSuper IRFH7440TRPBF(ES)
In-Stock: 545
545 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1576$ 0.79
50+$ 0.1248$ 6.24
150+$ 0.1108$ 16.62
500+$ 0.0933$ 46.65
2,500+$ 0.0855$ 213.75
5,000+$ 0.0808$ 404.00
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingPDFN-8L(5x6)
Drain to Source Voltage40V
Current - Continuous Drain(Id)93.56A
Output Capacitance(Coss)411pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation62.5W
RDS(on)2.2mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)340pF
Number1 N-channel
Input Capacitance(Ciss)5.595nF
Gate Charge(Qg)59nC
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

This device is an N-channel enhancement-mode MOSFET featuring advanced trench technology and design, offering excellent low on-resistance and low gate charge characteristics, suitable for DC-DC conversion, power switching, and charging circuits.

Features

AI Translation
  • 40V, typical on-resistance 2.2mΩ at VGS=10V; typical on-resistance 3mΩ at VGS=4.5V
  • High-density cell design for low on-resistance
  • Material: halogen-free
  • Reliable and robust
  • Avalanche-rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop computers
  • DC-DC conversion