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ElecSuper CSD19538Q3A(ES) product image
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ElecSuper CSD19538Q3A(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
CSD19538Q3A(ES)
LCSC Part #
C53199115
Packaging
PDFN-8L(3x3)
Customer #
Key Attributes
25W 100V 17.5A 1.5V 37mΩ@10V 1 N-channel N-Channel PDFN-8L(3x3) Single FETs, MOSFETs RoHS
Datasheetpdf iconElecSuper CSD19538Q3A(ES)
In-Stock: 930
930 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.146$ 0.73
50+$ 0.1425$ 7.13
150+$ 0.1402$ 21.03
500+$ 0.1378$ 68.90
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingPDFN-8L(3x3)
Output Capacitance(Coss)92pF
Pd - Power Dissipation25W
Configuration-
Drain to Source Voltage100V
Current - Continuous Drain(Id)17.5A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.5V
Reverse Transfer Capacitance (Crss@Vds)76pF
RDS(on)37mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.982nF
Gate Charge(Qg)20nC
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

CSD19538Q3A(ES) is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent on-resistance and low gate charge. This device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product CSD19538Q3A(ES) is lead-free.

Features

AI Translation
  • 100V, typical on-resistance 37 mΩ @ VGS = 10V
  • Typical on-resistance 39 mΩ @ VGS = 4.5V
  • Trench MOSFET technology
  • High-density cell design for low on-resistance
  • Halogen-free material
  • Reliable and robust
  • Avalanche-rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop computers
  • DC/DC conversion