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ElecSuper IRF7341TRPBF(ES) product image
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ElecSuper IRF7341TRPBF(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
IRF7341TRPBF(ES)
LCSC Part #
C53199110
Packaging
SOP-8
Customer #
Key Attributes
2W 60V 5A 1.6V 30mΩ@10V 2 N-Channel N-Channel SOP-8 Single FETs, MOSFETs RoHS
Datasheetpdf iconElecSuper IRF7341TRPBF(ES)
In-Stock: 3,000
3,000 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2288$ 1.14
50+$ 0.1812$ 9.06
150+$ 0.1609$ 24.14
500+$ 0.1354$ 67.70
3,000+$ 0.1241$ 372.30
6,000+$ 0.1173$ 703.80
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOP-8
Output Capacitance(Coss)59pF
Pd - Power Dissipation2W
Drain to Source Voltage60V
Configuration-
Current - Continuous Drain(Id)5A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.6V
RDS(on)30mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)50pF
Number2 N-Channel
Input Capacitance(Ciss)1.15nF
Gate Charge(Qg)21nC
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

IRF7341TRPBF(ES) is an N-channel enhancement-mode MOSFET. It employs advanced trench technology and design to deliver superior Rds(on) and low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits.

Features

AI Translation
  • 60V, typical Rds(on)=30mΩ at Vgs=10V; Rds(on)=36mΩ at Vgs=4.5V
  • Trench MOSFET technology
  • High-density cell design for low Rds(on)
  • Halogen-free material
  • Robust and reliable
  • Avalanche-rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop computers
  • DC/DC conversion