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ElecSuper DMG2301L-7(ES) product image
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ElecSuper DMG2301L-7(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
DMG2301L-7(ES)
LCSC Part #
C53199108
Packaging
SOT-23
Customer #
Key Attributes
800mW 20V 620mV 82mΩ@4.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS
Datasheetpdf iconElecSuper DMG2301L-7(ES)
In-Stock: 3,000
3,000 In stock, ships now
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QtyUnit PriceTotal Amount
20+$ 0.0325$ 0.65
200+$ 0.0255$ 5.10
600+$ 0.0216$ 12.96
3,000+$ 0.0193$ 57.90
9,000+$ 0.0173$ 155.70
21,000+$ 0.0162$ 340.20
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-23
Output Capacitance(Coss)35pF
Pd - Power Dissipation800mW
Drain to Source Voltage20V
Configuration-
Current - Continuous Drain(Id)-
Operating Temperature --
Gate Threshold Voltage (Vgs(th))620mV
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)82mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)185pF
Gate Charge(Qg)2.2nC
Vgs±12V
TypeP-Channel
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

DMG2301L-7(ES) is a P-channel enhancement mode MOSFET. It utilizes advanced trench technology and design to deliver superior on-resistance at low gate charge. This device is suitable for DC-DC conversion, power switching, and charging circuits.

Features

AI Translation
  • 20V, typical on-resistance of 82mΩ (at V<sub>GS</sub> = -4.5V)
  • Typical on-resistance of 118mΩ (at V<sub>GS</sub> = -2.5V)
  • Typical on-resistance of 180mΩ (at V<sub>GS</sub> = -1.8V)
  • Fast switching
  • High-density cell design for low on-resistance
  • Halogen-free material
  • Reliable and robust
  • Avalanche-rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop computers
  • DC/DC conversion