HXY MOSFET C3M0045065J1-TR-HXY
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | C3M0045065J1-TR-HXY |
| LCSC Part # | C53134125 |
| Packaging | TO-263-7L |
| Customer # | |
| Key Attributes | 650V 70A 2.7V 214W 36mΩ@18V 1 N-channel N-Channel TO-263-7L Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-263-7L | |
| Configuration | Standalone | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 70A | |
| Output Capacitance(Coss) | 115pF | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.7V | |
| Pd - Power Dissipation | 214W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.3pF | |
| RDS(on) | 36mΩ@18V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.525nF | |
| Gate Charge(Qg) | 80nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Wide bandgap SiC MOSFET technology
- Low on-resistance and high blocking voltage
- Low capacitance and high-speed switching
- Low reverse recovery charge
- Halogen-free, RoHS compliant
Applications
AI Translation
- Switching power supplies
- Renewable energy
- On-board chargers
- High-voltage DC/DC converters
In-Stock: 9
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 9.6002$ 7.6802 | $ 7.68 |
| 10+ | $ 8.2834$ 6.6268 | $ 66.27 |
| 30+ | $ 7.479$ 5.9832 | $ 179.50 |
| 100+ | $ 6.8063$ 5.4451 | $ 544.51 |
Standard Packaging800/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-263-7L | |
| Configuration | Standalone | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 70A | |
| Output Capacitance(Coss) | 115pF | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.7V | |
| Pd - Power Dissipation | 214W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.3pF | |
| RDS(on) | 36mΩ@18V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.525nF | |
| Gate Charge(Qg) | 80nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Wide bandgap SiC MOSFET technology
- Low on-resistance and high blocking voltage
- Low capacitance and high-speed switching
- Low reverse recovery charge
- Halogen-free, RoHS compliant
Applications
AI Translation
- Switching power supplies
- Renewable energy
- On-board chargers
- High-voltage DC/DC converters
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |



