Infineon 1ED3120MC12HXUMA1

The 1ED31xxMC12H (1ED-X3 Compact) gate driver ICs are galvanically isolated single channel gate driver ICs for IGBT, MOSFET and SiC MOSFET in PG-DSO-8 package. They provide a typical output current of up to 14.0 A on separate source and sink pins or a typical output current of 10.0 A with an additional 3.0 A active Miller clamp. The input logic pins operate on a wide input voltage range from 3 V to 15 V using CMOS threshold levels to support 3.3 V microcontrollers. Data transfer across the isolation barrier is realized by the coreless transformer technology. All variants have logic input and driver output undervoltage lockout (UVLO), and active shutdown. The gate drivers are certified according to VDE 0884-11 and UL 1577

• Single channel isolated gate driver
• For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs
• Up to 14.0 A typical peak output current
• 40 V absolute maximum output supply voltage
• High common-mode transient immunity CMTI > 200 kV/μs
• Separate source and sink outputs or active Miller clamp with active shutdown and short circuit clamping
• Galvanically isolated coreless transformer gate driver
• 3.3 V and 5 V input supply voltage
• Suitable for operation at high ambient temperature and in fast switching applications
• Certification: VDE 0884-11 with V|0RM = 1767 V (peak) (Certificate no. 40052310) and UL 1577 with V|S0 = 5.7 kV (rms) for 1 min (File E311313)

• AC and brushless DC motor drives
• High voltage DC-DC converter and DC-AC inverter
• Induction heating resonant application
• UPS-systems
• Commercial air-conditioning (CAC)
• Server and telecom switched mode power supplies (SMPS)
• Solar inverters, e.g. for 1500 V (DC) systems