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DIODES DMN62D1SFB-7B product image
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DIODES DMN62D1SFB-7BRoHS

Manufacturer
DIODES
MPN
DMN62D1SFB-7B
LCSC Part #
C531164
Packaging
X1-DFN1006-3
Customer #
Key Attributes
MOSFET N-CH 60V 410mA X1-DFN1006-3
Datasheetpdf iconDIODES DMN62D1SFB-7B
In-Stock: 4,055
4,055 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.1118$ 0.56
50+$ 0.087$ 4.35
150+$ 0.0745$ 11.18
500+$ 0.0652$ 32.60
2,500+$ 0.0578$ 144.50
5,000+$ 0.054$ 270.00
Standard Packaging10000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDIODES
PackagingX1-DFN1006-3
Drain to Source Voltage60V
Current - Continuous Drain(Id)410mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation470mW
Reverse Transfer Capacitance (Crss@Vds)5.6pF
RDS(on)1.4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)80pF
Gate Charge(Qg)1.39nC@10V
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging10000
Sales UnitPiece

Introduction

AI Translation

This MOSFET is designed to minimize on-resistance RDS(ON) while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.

Features

AI Translation
  • Footprint only 0.6 mm² — thirteen times smaller than SOT23
  • Low on-resistance
  • Low gate threshold voltage
  • Fast switching speed
  • Ultra-compact SMT package
  • Gate ESD protection 200V
  • Fully lead-free and fully RoHS compliant
  • Halogen- and antimony-free, "green" device
  • Device meets JEDEC standards (as referenced in AEC-Q) for high reliability

Applications

AI Translation
  • Load switch
  • Portable applications
  • Power management functions