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JSMSEMI NX3008PBK,215-JSM product image
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JSMSEMI NX3008PBK,215-JSMRoHS

Manufacturer
JSMSEMIAsian Brands
MPN
NX3008PBK,215-JSM
LCSC Part #
C53114179
Packaging
SOT-23
Customer #
Key Attributes
225mW 30V 170mA 1.6V 4.4Ω@4.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS
Datasheetpdf iconJSMSEMI NX3008PBK,215-JSM
In-Stock: 3,000
3,000 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
10+$ 0.0579$ 0.58
100+$ 0.0461$ 4.61
300+$ 0.0402$ 12.06
3,000+$ 0.0358$ 107.40
6,000+$ 0.0323$ 193.80
9,000+$ 0.0305$ 274.50
Standard Packaging3000/Full Reel
Better price for more quantity?
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJSMSEMI
PackagingSOT-23
Output Capacitance(Coss)3pF
Pd - Power Dissipation225mW
ConfigurationStandalone
Drain to Source Voltage30V
Current - Continuous Drain(Id)170mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Reverse Transfer Capacitance (Crss@Vds)1.8pF
RDS(on)4.4Ω@4.5V
Number1 P-Channel
Input Capacitance(Ciss)43pF
Gate Charge(Qg)1.7nC
Vgs±20V
TypeP-Channel

Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

Trench power MOSFET technology; excellent thermal dissipation package; high-density cell design for low Rds(ON); moisture sensitivity level 1; epoxy meets UL 94 V-0 flammability rating; halogen-free.

Features

AI Translation
  • Drain-Source Voltage (V DS): -30V
  • Drain Current (ID): -0.17A
  • On-Resistance (Rds(ON)) (at VGS = 10V): <4700mΩ
  • 100% EAS tested
  • 100% VVDS tested

Applications

AI Translation
  • Power switch applications
  • Uninterruptible power supplies
  • DC-DC converters
  • Motor drivers