JSMSEMI NX3008PBK,215-JSM
| Manufacturer | JSMSEMIAsian Brands |
| MPN | NX3008PBK,215-JSM |
| LCSC Part # | C53114179 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | 225mW 30V 170mA 1.6V 4.4Ω@4.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 3pF | |
| Pd - Power Dissipation | 225mW | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 170mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.8pF | |
| RDS(on) | 4.4Ω@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 43pF | |
| Gate Charge(Qg) | 1.7nC | |
| Vgs | ±20V | |
| Type | P-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
Trench power MOSFET technology; excellent thermal dissipation package; high-density cell design for low Rds(ON); moisture sensitivity level 1; epoxy meets UL 94 V-0 flammability rating; halogen-free.
Features
AI Translation
- Drain-Source Voltage (V DS): -30V
- Drain Current (ID): -0.17A
- On-Resistance (Rds(ON)) (at VGS = 10V): <4700mΩ
- 100% EAS tested
- 100% VVDS tested
Applications
AI Translation
- Power switch applications
- Uninterruptible power supplies
- DC-DC converters
- Motor drivers
In-Stock: 3,000
3,000 In stock, ships now
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0579 | $ 0.58 |
| 100+ | $ 0.0461 | $ 4.61 |
| 300+ | $ 0.0402 | $ 12.06 |
| 3,000+ | $ 0.0358 | $ 107.40 |
| 6,000+ | $ 0.0323 | $ 193.80 |
| 9,000+ | $ 0.0305 | $ 274.50 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 3pF | |
| Pd - Power Dissipation | 225mW | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 170mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.8pF | |
| RDS(on) | 4.4Ω@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 43pF | |
| Gate Charge(Qg) | 1.7nC | |
| Vgs | ±20V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
Trench power MOSFET technology; excellent thermal dissipation package; high-density cell design for low Rds(ON); moisture sensitivity level 1; epoxy meets UL 94 V-0 flammability rating; halogen-free.
Features
AI Translation
- Drain-Source Voltage (V DS): -30V
- Drain Current (ID): -0.17A
- On-Resistance (Rds(ON)) (at VGS = 10V): <4700mΩ
- 100% EAS tested
- 100% VVDS tested
Applications
AI Translation
- Power switch applications
- Uninterruptible power supplies
- DC-DC converters
- Motor drivers
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



