JSMSEMI PUMD13,115-JSM
| Manufacturer | JSMSEMIAsian Brands |
| MPN | PUMD13,115-JSM |
| LCSC Part # | C53114134 |
| Packaging | SOT-363 |
| Customer # | |
| Key Attributes | 50V 80 100mA 150mW 2 NPN (Pre-Biased) NPN SOT-363 Single, Pre-Biased Bipolar Transistors RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Transition frequency(fT) | 250MHz | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | 300mV@5mA,0.25mA | |
| Input Resistor | 6.11kΩ | |
| Resistor Ratio | 12 | |
| Pd - Power Dissipation | 150mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V@5mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Number | 2 NPN (Pre-Biased) | |
| type | NPN |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- SOT-363 compatible with automatic placement machines.
- Independent transistor elements eliminate interference.
- Placement cost and board area reduced by half.
In-Stock: 2,930
2,930 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.0786 | $ 0.39 |
| 50+ | $ 0.0626 | $ 3.13 |
| 150+ | $ 0.0547 | $ 8.21 |
| 500+ | $ 0.0487 | $ 24.35 |
| 3,000+ | $ 0.0439 | $ 131.70 |
| 6,000+ | $ 0.0415 | $ 249.00 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Transition frequency(fT) | 250MHz | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | 300mV@5mA,0.25mA | |
| Input Resistor | 6.11kΩ | |
| Resistor Ratio | 12 | |
| Pd - Power Dissipation | 150mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V@5mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Number | 2 NPN (Pre-Biased) | |
| type | NPN |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- SOT-363 compatible with automatic placement machines.
- Independent transistor elements eliminate interference.
- Placement cost and board area reduced by half.
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |



