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JSMSEMI BSS138BKS,115-JSM product image
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JSMSEMI BSS138BKS,115-JSMRoHS

Manufacturer
JSMSEMIAsian Brands
MPN
BSS138BKS,115-JSM
LCSC Part #
C53114118
Packaging
SOT-363
Customer #
Key Attributes
150mW 50V 300mA 1.2V 1.9Ω@10V 2 N-Channel N-Channel SOT-363 Single FETs, MOSFETs RoHS
Datasheetpdf iconJSMSEMI BSS138BKS,115-JSM
In-Stock: 2,030
2,030 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
10+$ 0.0378$ 0.38
100+$ 0.0301$ 3.01
300+$ 0.0263$ 7.89
3,000+$ 0.0234$ 70.20
6,000+$ 0.0211$ 126.60
9,000+$ 0.0199$ 179.10
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJSMSEMI
PackagingSOT-363
Output Capacitance(Coss)12.9pF
Pd - Power Dissipation150mW
Configuration-
Drain to Source Voltage50V
Current - Continuous Drain(Id)300mA
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.2V
RDS(on)1.9Ω@10V
Reverse Transfer Capacitance (Crss@Vds)5.9pF
Number2 N-Channel
Input Capacitance(Ciss)26.5pF
Gate Charge(Qg)-
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This device is a dual N-channel enhancement-mode MOSFET featuring advanced trench technology and design, offering excellent low on-resistance and low gate charge, suitable for DC-DC conversion, power switching, and charging circuits. Package: SOT-363.

Features

AI Translation
  • High-density cell design for ultra-low on-resistance
  • Robust and reliable

Applications

AI Translation
  • Direct logic level interface: TTL/CMOS
  • Battery-powered systems
  • Solid-state relays