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JSMSEMI 2N7002NXAKR-JSM product image
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JSMSEMI 2N7002NXAKR-JSMRoHS

Manufacturer
JSMSEMIAsian Brands
MPN
2N7002NXAKR-JSM
LCSC Part #
C53113887
Packaging
SOT-23
Customer #
Key Attributes
830mW 60V 500mA 1.6V 1.9Ω@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS
Datasheetpdf iconJSMSEMI 2N7002NXAKR-JSM
In-Stock: 2,960
2,960 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
20+$ 0.0199$ 0.40
200+$ 0.0155$ 3.10
600+$ 0.0131$ 7.86
3,000+$ 0.0116$ 34.80
9,000+$ 0.0103$ 92.70
21,000+$ 0.0096$ 201.60
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJSMSEMI
PackagingSOT-23
Output Capacitance(Coss)4.2pF
Pd - Power Dissipation830mW
Drain to Source Voltage60V
ConfigurationStandalone
Current - Continuous Drain(Id)500mA
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.6V
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)1.9Ω@10V
Number1 N-channel
Input Capacitance(Ciss)30pF
Gate Charge(Qg)305pC
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Features

AI Translation
  • Surface mount package
  • Advanced trench cell design
  • Ultra-low threshold voltage
  • ESD protection capability (human body model rating > 2kV)
  • Breakdown voltage BV ~ 60 V
  • Total power dissipation Ptot 0.83 W
  • Drain current ID 0.5 A
  • On-state resistance RDS(ON) 3 Ω at VGS = 10 V
  • On-state resistance RDS(ON) 4 Ω at VGS = 4.5 V