JSMSEMI 2N7002P,215-JSM
| Manufacturer | JSMSEMIAsian Brands |
| MPN | 2N7002P,215-JSM |
| LCSC Part # | C53113838 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | 830mW 60V 500mA 1.6V 1.9Ω@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 4.2pF | |
| Pd - Power Dissipation | 830mW | |
| Drain to Source Voltage | 60V | |
| Configuration | Standalone | |
| Current - Continuous Drain(Id) | 500mA | |
| Operating Temperature - | - | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| RDS(on) | 1.9Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 30pF | |
| Gate Charge(Qg) | 305pC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Surface mount package
- Advanced trench cell design
- Ultra-low threshold voltage
- ESD protection (HBM > 2KV)
- BV ≈ 60V
- Ptot ≈ 0.83W
- ID ≈ 0.5A
- RDS(on) ≈ 3Ω @ VGS = 10V
- RDS(on) ≈ 4Ω @ VGS = 4.5V
In-Stock: 3,000
3,000 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 20+ | $ 0.0227 | $ 0.45 |
| 200+ | $ 0.0175 | $ 3.50 |
| 600+ | $ 0.0146 | $ 8.76 |
| 3,000+ | $ 0.0129 | $ 38.70 |
| 9,000+ | $ 0.0114 | $ 102.60 |
| 21,000+ | $ 0.0106 | $ 222.60 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 4.2pF | |
| Pd - Power Dissipation | 830mW | |
| Drain to Source Voltage | 60V | |
| Configuration | Standalone | |
| Current - Continuous Drain(Id) | 500mA | |
| Operating Temperature - | - | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| RDS(on) | 1.9Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 30pF | |
| Gate Charge(Qg) | 305pC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Surface mount package
- Advanced trench cell design
- Ultra-low threshold voltage
- ESD protection (HBM > 2KV)
- BV ≈ 60V
- Ptot ≈ 0.83W
- ID ≈ 0.5A
- RDS(on) ≈ 3Ω @ VGS = 10V
- RDS(on) ≈ 4Ω @ VGS = 4.5V
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



