TECH PUBLIC AON7403
| Manufacturer | TECH PUBLICAsian Brands |
| MPN | AON7403 |
| LCSC Part # | C5310961 |
| Packaging | PDFN-8 |
| Customer # | |
| Key Attributes | MOSFET 30V 50A PDFN-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TECH PUBLIC | |
| Packaging | PDFN-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 50A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Pd - Power Dissipation | 38W | |
| RDS(on) | 8mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 421pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.448nF | |
| Gate Charge(Qg) | 30nC@15V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
UTC 4N60 is a high-voltage power MOSFET designed with superior characteristics, including fast switching time, low gate charge, low on-resistance, and high avalanche ruggedness. This power MOSFET is commonly used in high-speed switching applications such as power supplies, PWM motor control, high-efficiency AC-DC converters, and bridge circuits.
Features
AI Translation
- VDS = -30V, I0 = -50A
- RDs(on) 8.0mΩ @Vgs = -10V typ
- RDs(on) 18mΩ @Vgs = -4.5V typ
Applications
AI Translation
- Load/Power Switching
- Interfacing
- Switching
- Logic Level Shift
In-Stock: 16,560
16,560 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2738 | $ 1.37 |
| 50+ | $ 0.2113 | $ 10.57 |
| 150+ | $ 0.1845 | $ 27.68 |
| 500+ | $ 0.1511 | $ 75.55 |
| 2,500+ | $ 0.1297 | $ 324.25 |
| 5,000+ | $ 0.1208 | $ 604.00 |
Standard Packaging5000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TECH PUBLIC | |
| Packaging | PDFN-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 50A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Pd - Power Dissipation | 38W | |
| RDS(on) | 8mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 421pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.448nF | |
| Gate Charge(Qg) | 30nC@15V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
UTC 4N60 is a high-voltage power MOSFET designed with superior characteristics, including fast switching time, low gate charge, low on-resistance, and high avalanche ruggedness. This power MOSFET is commonly used in high-speed switching applications such as power supplies, PWM motor control, high-efficiency AC-DC converters, and bridge circuits.
Features
AI Translation
- VDS = -30V, I0 = -50A
- RDs(on) 8.0mΩ @Vgs = -10V typ
- RDs(on) 18mΩ @Vgs = -4.5V typ
Applications
AI Translation
- Load/Power Switching
- Interfacing
- Switching
- Logic Level Shift
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



