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UTC 2N65G-TM3-T product image
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UTC 2N65G-TM3-TRoHS

Manufacturer
UTCAsian Brands
MPN
2N65G-TM3-T
LCSC Part #
C5310407
Packaging
TO-251
Customer #
Key Attributes
MOSFET N-CH 650V 2A TO-251
Datasheetpdf iconUTC 2N65G-TM3-T
In-Stock: 3,386
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10+$ 0.1635$ 1.64
30+$ 0.1531$ 4.59
80+$ 0.1401$ 11.21
480+$ 0.1343$ 64.46
960+$ 0.1308$ 125.57
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerUTC
PackagingTO-251
Drain to Source Voltage650V
Output Capacitance(Coss)40pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation28W
RDS(on)5Ω@10V
Reverse Transfer Capacitance (Crss@Vds)12pF
Number1 N-channel
Input Capacitance(Ciss)370pF
Gate Charge(Qg)55nC@10V
TypeN-Channel
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Introduction

AI Translation

The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

Features

AI Translation
  • ×A_DS(ON) ≤ 5.0 Ω @ V_GS = 10V, l_D = 1.0A
  • Ultra Low gate charge (typical 45nC)
  • Low reverse transfer capacitance (CRSS = typical 9 pF)
  • Fast switching capability
  • Avalanche energy specified
  • Improved dv/dt capability, high ruggedness

Applications

AI Translation
  • High speed switching applications in power supplies
  • PWM motor controls
  • High efficient DC to DC converters
  • Bridge circuits