GOFORD GT130N20Q
| Manufacturer | GOFORDAsian Brands |
| MPN | GT130N20Q |
| LCSC Part # | C53100824 |
| Packaging | TO-247 |
| Customer # | |
| Key Attributes | 260W 200V 92A 3.2V 9.8mΩ@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | GOFORD | |
| Packaging | TO-247 | |
| Output Capacitance(Coss) | 350pF | |
| Pd - Power Dissipation | 260W | |
| Configuration | - | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 92A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3.2V | |
| RDS(on) | 9.8mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.9nF | |
| Gate Charge(Qg) | 77nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
GT130N20Q utilizes advanced trench technology to achieve excellent RDS(ON) and low gate charge, suitable for a wide range of applications.
Features
AI Translation
- VDS: 200V
- ID (at VGS = 10V): 92A
- RDS(ON) (at VGS = 10V): 12mΩ
- 100% avalanche tested
- RoHS compliant
Applications
AI Translation
- Power switch
- DC/DC converter
In-Stock: 15
15 In stock, ships now
Not recommended for new designs
Once stock is depleted, this item will be marked as "Out of Stock."
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.9325 | $ 2.93 |
| 10+ | $ 2.4975 | $ 24.98 |
| 30+ | $ 2.2244 | $ 66.73 |
| 90+ | $ 1.945 | $ 175.05 |
| 360+ | $ 1.8195 | $ 655.02 |
| 1,080+ | $ 1.7656 | $ 1906.85 |
Standard Packaging30/Full Tube | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | GOFORD | |
| Packaging | TO-247 | |
| Output Capacitance(Coss) | 350pF | |
| Pd - Power Dissipation | 260W | |
| Configuration | - | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 92A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3.2V | |
| RDS(on) | 9.8mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.9nF | |
| Gate Charge(Qg) | 77nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
GT130N20Q utilizes advanced trench technology to achieve excellent RDS(ON) and low gate charge, suitable for a wide range of applications.
Features
AI Translation
- VDS: 200V
- ID (at VGS = 10V): 92A
- RDS(ON) (at VGS = 10V): 12mΩ
- 100% avalanche tested
- RoHS compliant
Applications
AI Translation
- Power switch
- DC/DC converter
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



