LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
24% OFF
TECH PUBLIC FDMS86152-TP product image
  • FDMS86152-TP thumbnail 1
  • FDMS86152-TP thumbnail 2
  • FDMS86152-TP thumbnail 3
  • Pinout
  • Footprint
Images for reference only

TECH PUBLIC FDMS86152-TPRoHS

Manufacturer
TECH PUBLICAsian Brands
MPN
FDMS86152-TP
LCSC Part #
C53100635
Packaging
PDFN-8(5x6)
Customer #
Key Attributes
57W 100V 60A 3V 6.5mΩ@10V 1 N-channel N-Channel PDFN-8(5x6) Single FETs, MOSFETs RoHS
Datasheetpdf iconTECH PUBLIC FDMS86152-TP
In-Stock: 190
190 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.6883$ 0.5232$ 0.52
10+$ 0.5545$ 0.4215$ 4.22
30+$ 0.4867$ 0.3699$ 11.10
100+$ 0.4206$ 0.3197$ 31.97
500+$ 0.3796$ 0.2885$ 144.25
1,000+$ 0.3592$ 0.2730$ 273.00
Standard Packaging5000/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTECH PUBLIC
PackagingPDFN-8(5x6)
Output Capacitance(Coss)410pF
Pd - Power Dissipation57W
ConfigurationStandalone
Drain to Source Voltage100V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
RDS(on)6.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)38pF
Number1 N-channel
Input Capacitance(Ciss)2.86nF
Gate Charge(Qg)40nC
Vgs±20V
TypeN-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

This product is an N-channel power MOSFET fabricated using advanced trench technology, featuring a drain-source voltage of 100V, a drain current of 60A at a gate-source voltage of 10V, and a typical on-resistance of 6.5mΩ. It comes in a PDFN5X6-8 package, suitable for switching power supply applications requiring high efficiency and high power density.

Applications

AI Translation
  • Load switch
  • High-frequency switching and synchronous rectification
  • Intermediate active clamp DC/DC power supply