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DIODES DMT10H010LPS-13 product image
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DIODES DMT10H010LPS-13RoHS

Manufacturer
DIODES
MPN
DMT10H010LPS-13
LCSC Part #
C530905
Packaging
PowerDI-5060-8
Customer #
Key Attributes
MOSFET N-CH 100V 98A PowerDI-5060-8
Datasheetpdf iconDIODES DMT10H010LPS-13
In-Stock: 2
2 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 0.5419$ 0.54
10+$ 0.456$ 4.56
30+$ 0.4029$ 12.09
100+$ 0.3483$ 34.83
500+$ 0.3233$ 161.65
1,000+$ 0.3124$ 312.40
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDIODES
PackagingPowerDI-5060-8
Drain to Source Voltage100V
Output Capacitance(Coss)764pF
Current - Continuous Drain(Id)98A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation139W
Reverse Transfer Capacitance (Crss@Vds)44pF
RDS(on)6.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.166nF
Gate Charge(Qg)58.4nC@10V
TypeN-Channel
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Introduction

AI Translation

This next-generation N-channel enhancement-mode MOSFET is designed to minimize on-resistance RDS(ON) while maintaining superior switching performance. The device is ideal for notebook battery power management and load switching applications.

Features

AI Translation
  • High-efficiency thermal dissipation package — low-temperature operation applications
  • High conversion efficiency
  • Low on-resistance RDS(ON) — minimizes conduction losses
  • Low input capacitance
  • Fast switching speed
  • Package height <1.1mm — slim and lightweight applications (PowerDI)
  • Lead-free finish; RoHS compliant
  • Halogen- and antimony-free; "Green" device
  • Meets JEDEC standards (as referenced in AEC-Q) for high reliability

Applications

AI Translation
  • Motor control
  • DC-DC converter
  • Power management