KEC 2N7002KB-RTK/HP
| Manufacturer | |
| MPN | 2N7002KB-RTK/HP |
| LCSC Part # | C5300003 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 0.3A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | KEC | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 300mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 400mW | |
| RDS(on) | 2.2Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.2pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 15pF |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This Small Signal Trench MOSFET has low on resistance, low gate charge and ESD Protected characteristics. It is mainly suitable for Battery Operated Systems and Direct logic-level Interface applications.
Features
AI Translation
- VDSS = 60V, ID = 0.3A
- Drain-Source ON Resistance: RDS(ON)(Max) = 2.2Ω @ VGS = 10V
- ESD Protected: 2KV
Applications
AI Translation
- Battery Operated Systems
- Direct logic-level Interface
- Voltage controlled small signal switch
In-Stock: 7,200
7,200 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 20+ | $ 0.0256 | $ 0.51 |
| 200+ | $ 0.0202 | $ 4.04 |
| 600+ | $ 0.0172 | $ 10.32 |
| 3,000+ | $ 0.0154 | $ 46.20 |
| 9,000+ | $ 0.0138 | $ 124.20 |
| 21,000+ | $ 0.013 | $ 273.00 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | KEC | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 300mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 400mW | |
| RDS(on) | 2.2Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.2pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 15pF |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This Small Signal Trench MOSFET has low on resistance, low gate charge and ESD Protected characteristics. It is mainly suitable for Battery Operated Systems and Direct logic-level Interface applications.
Features
AI Translation
- VDSS = 60V, ID = 0.3A
- Drain-Source ON Resistance: RDS(ON)(Max) = 2.2Ω @ VGS = 10V
- ESD Protected: 2KV
Applications
AI Translation
- Battery Operated Systems
- Direct logic-level Interface
- Voltage controlled small signal switch
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
