AGMSEMI AGM025N13LL
| Manufacturer | AGMSEMIAsian Brands |
| MPN | AGM025N13LL |
| LCSC Part # | C5297522 |
| Packaging | TOLL |
| Customer # | |
| Key Attributes | MOSFET N-CH 135V 305A TOLL |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | TOLL | |
| Drain to Source Voltage | 135V | |
| Current - Continuous Drain(Id) | 305A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 357W | |
| Reverse Transfer Capacitance (Crss@Vds) | 360pF | |
| RDS(on) | 2.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.417nF | |
| Gate Charge(Qg) | 1.387uC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The AGM025N13LL combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Features
AI Translation
- Advance high cell density Trench technology
- Low RDS(ON) to minimize conductive loss
- Low Gate Charge for fast switching
- Low Thermal resistance
- 100% Avalanche tested
- 100% DVDS tested
Applications
AI Translation
- MB/VGA Vcore
- SMPS 2nd Synchronous Rectifier
- POL application
- BLDC Motor driver
In-Stock: 185
185 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.2166$ 2.1058 | $ 2.11 |
| 10+ | $ 1.8842$ 1.7900 | $ 17.90 |
| 30+ | $ 1.6767$ 1.5929 | $ 47.79 |
| 100+ | $ 1.4626$ 1.3895 | $ 138.95 |
| 500+ | $ 1.367$ 1.2987 | $ 649.35 |
| 1,000+ | $ 1.3264$ 1.2601 | $ 1260.10 |
Standard Packaging2000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | TOLL | |
| Drain to Source Voltage | 135V | |
| Current - Continuous Drain(Id) | 305A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 357W | |
| Reverse Transfer Capacitance (Crss@Vds) | 360pF | |
| RDS(on) | 2.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.417nF | |
| Gate Charge(Qg) | 1.387uC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The AGM025N13LL combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Features
AI Translation
- Advance high cell density Trench technology
- Low RDS(ON) to minimize conductive loss
- Low Gate Charge for fast switching
- Low Thermal resistance
- 100% Avalanche tested
- 100% DVDS tested
Applications
AI Translation
- MB/VGA Vcore
- SMPS 2nd Synchronous Rectifier
- POL application
- BLDC Motor driver
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



